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Materials Analysis25M2000 for Fast In-situ or Ex-situ EllipsometryThe M-2000 line of spectroscopic ellipsometers is engineered to meet the diverse demands of thin !lm characterisation. An advanced optical design, wide spectral range, and fast data acquisition make it an extremely powerful and versatile tool.The M-2000 delivers both speed and accuracy. Our patented RCE technology combines Rotating Compensator Ellipsometry with high-speed CCD detection to collect data from the entire spectrum (hundreds of wavelengths) in a fraction of a second with a wide array of con!gurations.FeaturesAdvanced Ellipsometer TechnologyThe M-2000 utilizes our patented RCE (rotating compensator ellipsometer) technology to achieve high accuracy and precision.Flexible System IntegrationWith modular optical design, the M-2000 can be attached directly to your process chamber or con!gured on any of our table-top bases.Fast Spectral DetectionThe RCE design is compatible with advancedCCD detection to measure ALL wavelengths simultaneously.AccuracyAdvanced design ensures accurate ellipsometry measurements for any sample.Wide Spectral RangeThis ellipsometer collects over 700 wavelengths from the ultraviolet to the near-infrared - simultaneously.M2000 ApplicationsThe speed, accuracy, and wide spectral range of the M-2000 make it ideal for a diverse range of measurements. The primary application of ellipsometry is to characterize !lm thickness and optical constants. The M-2000 excels at both. It measures !lm thickness from sub-nanometers up to tens of microns and the optical properties from transparent to absorbing materials. This "exible instrument can characterize any type of thin !lm: dielectric, organic, semiconductor, metal, and more. Wide spectral range and variable angle allow the M-2000 to diagnose many multi-layered structures.In-SituThe M-2000 is ideal for in-situ monitoring and process control. It is used successfully with a number of different processes to provide real-time results.QCM-DBoth spectroscopic ellipsometry (SE) and Quartz Crystal Microbalance with Dissipation (QCM-D) can detect sub-monolayer changes in thickness of nanometer scale !lms.However, the two techniques measure quite different things: QCM-D measures the mass and associated mechanical properties of the !lm, while SE measures volume (via thickness, since V = thick x Area) and associated optical properties.Combining these two complimentary techniques gives us new information that cannot be determined from either technique$alone.

Materials Analysis26www.lotoriel.co.ukT-Solar for Photovoltaic applicationsThe T-Solar ellipsometer combines the best photovoltaic measurement technology into a single system designed speci!cally for textured samples. Based on the established M-2000 rotating compensator spectroscopic ellipsometer, the T-Solar measures hundreds of wavelength across the UV-Visible-NIR. To improve performance on rough, textured surfaces that signi!cantly reduce re"ected signal, the T-Solar combines a special High-Intensity Lamp source with our new Intensity-Optimizer*. The T-Solar is perfect for characterizing AR coatings on etched silicon surfaces. In addition, the T-Solar features an adjustable tilt-rotation-stage*, which is required to align the pyramid structures of alkaline-etched monocrystalline surfaces.Base Options: ???? Manual Angle or Automated Angle ???? 45° to 90° ???? Horizontal Sample for standard measurement. ???? Special Tilt (0°- 60°) and Rotation for Mono-crystalline Textured SurfacesWavelength Range: 245 nm to 1000 nm, approximately 470 total wavelengthsDetection System: CCD detector for simultaneous collection of all wavelengths.Measurement Time: All wavelengths collected in less than 1 second. However, longer averaging (up to 20 seconds) is necessary for the low-light conditions of most textured solar cells.Intensity Optimizer: Patented method to manually adjust the measurement beam intensity. Adjust to match both rough and smooth surfaces.IR VASE Infrared EllipsometerThe IR-VASE is the !rst and only spectroscopic ellipsometer to cover the spectral range from 2 to 30 microns (333 to 5000 wavenumbers). The IR-VASE can determine both n and k for materials over the entire width of the spectral range without extrapolating data outside the measured range, as with a Kramers-Kronig analysis. Like other Woollam ellipsometers, the IR-VASE is perfect for thin !lms or bulk materials including dielectrics, semiconductors, polymers, and metals.